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| High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.6 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 1200 1200 20 30 6 24 6 25 500 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W C C C C g g TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 6 4 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 100 25 500 2.6 V V nA A A VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99024B(01/04) IXTH 6N120 IXTT 6N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3 5 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz 175 60 28 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 33 42 18 56 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 13 25 0.42 (TO-247) 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Dim. Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 24 1.5 850 A A V ns Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 6A -di/dt = 100 A/s Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 6N120 IXTT 6N120 Fig. 1. Output Characteristics @ 25 Deg. C 6 5 VGS = 10V 9V 8V 7V 6V 1 0 VGS = 10V 9V 8V 7V Fig. 2. Extended Output Characteristics @ 25 deg. C 8 ID - Amperes ID - Amperes 4 3 2 1 0 0 2 6 6V 4 5V 2 5V 0 4 V DS - Volts 6 8 1 0 1 2 1 4 1 6 0 5 1 0 1 5 20 25 30 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 6 5 VGS = 10V 9V 8V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 3.1 2.8 VGS = 10V RDS(on) - Normalized 2.5 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 ID = 6A ID = 3A ID - Amperes 4 3 2 5V 1 0 0 5 1 0 1 5 20 25 30 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 2.8 2.5 VGS = 10V T J = 125C 7 6 5 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0 1 .5 3 4.5 ID - Amperes 4 3 2 1 0 T J = 25C 6 7.5 9 -50 -25 0 25 50 75 1 00 1 25 1 50 ID - Amperes TC - Degrees Centigrade (c) 2004 IXYS All rights reserved IXTH 6N120 IXTT 6N120 Fig. 7. Input Admittance 6 5 1 2 1 0 Fig. 8. Transconductance ID - Amperes 3 2 1 0 3.5 4 T J = -40C 25C 125C Gfs - Siemens 4 8 6 4 2 0 T J = -40C 25C 125C 4.5 5 5.5 6 6.5 V GS - Volts 0 1 .5 3 4.5 6 7.5 9 ID - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 20 1 0 Fig. 10. Gate Charge 1 6 8 VDS = 600V ID = 3A IG = 10mA IS - Amperes 1 2 VGS - Volts T J = 25C 0.7 0.8 0.9 6 8 T J = 125C 4 4 2 0 0.4 0.5 0.6 0 0 1 0 20 30 40 50 60 V SD - Volts QG - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M hz 1 Fig. 12. Maximum Transient Thermal Resistance Capacitance - pF 1 000 C oss 1 00 C rss 1 0 0 5 1 0 1 5 R - (C/W) (th)JC 30 35 40 C iss 0.1 0.01 V DS - Volts 20 25 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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